2nd International Workshop on Resistive RAM

 

October 8 – 9, 2012

 

Dear Colleague,                                                                                              July 10, 2012

mec and Stanford NMTRI* are jointly organizing the 2nd International Workshop on Resistive RAM, addressing all aspects of RRAM (including oxide-based RRAM, CBRAM, selector, and array considerations). This year, the workshop will be held at the campus of Stanford University, California, USA, on October 8th and 9th (Monday and Tuesday), 2012.

 

Resistive memories are seen today as one of the most promising emerging candidates to become a key memory technology of the future, with many potential applications, ranging from replacement of current mass production commodity memories to embedded applications and even creating novel market segments.

 

The intention is for this workshop to serve as a forum gathering key scientists and technologists working on RRAM, including academia as well as industry, to discuss both the fundamental mechanisms controlling the operation, scalability and reliability as well as technological potential and challenges of these exciting memories. 

 

The 1st International Workshop on Resistive RAM held in October 2011 at IMEC was very successful, with over 160 participants from industry, academia, and research consortia. The program of the previous workshop can be found at:

http://www.imec.be/tcmwebapp/internet/course.tcm?L=EN_GB&K=MTC&Course=AAAAIYE

 

This year, the workshop will follow the same successful format of last year. The workshop will consist of invited talks and panel discussions, as well as a poster session aimed at encouraging a wider participation including students. To foster discussions, the workshop will be kept small and participation will be by invitation only.

 

On behalf of the Organizing Committee of the 2nd International Workshop on Resistive RAM, we herewith are pleased to invite you to mark your calendar and plan on attending this invitation-only workshop. The list of invited speakers and a draft program is appended below.

 

Information about the workshop will be updated on this website:

http://nmtri.stanford.edu/RRAM2012/index.html

 

We are looking forward to your participation in this year’s workshop.

 

Sincerely Yours,

 

Dr. Dirk Wouters             Prof. H.-S. P. Wong             Prof. Y. Nishi                   Prof. H. Maes

Imec                                Stanford University             Stanford University         Sr. VP Imec

Principal Scientist,          Professor,                            Professor,                       Coordinator CALIT

Memory                          Electrical Engineering         Electrical Engineering

wouters@imec.be           hspwong@stanford.edu      nishiy@stanford.edu        maesh@imec.be    

                                                                                                                                   

 

 

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The event is organized with the support of Imec’s Center of Advanced Learning in Information Technologies (CALIT). CALIT is an initiative of IMEC, started in 2004 and that aims at providing a platform for high-level Training Programs and Events that are visionary and interdisciplinary in nature. CALIT focuses on a number of themes of high importance and in which cross-disciplinarity is key. Since its start in 2004, 14 CALIT Visionary Symposia have been organized involving 85 lecturers and attracting more than 1,650 participants. In addition to these symposia, also brainstorm sessions, seminars and summer schools have been held for a total of 38 events.

                                                                                                           

 

*Stanford NMTRI (Nonvolatile Memory Technology Research Initiative) is an industrial affiliate program at Stanford. URL: http://nmtri.stanford.edu/

 

 

 





  
2nd International Workshop on Resistive RAM

October 8 - 9, 2012
Stanford, CA, USA