2nd
International Workshop on Resistive RAM
October 8 – 9, 2012
October 8,
2012
(Monday) – Paul G. Allen Building Extension Auditorium (Allen 101X),
Stanford
Univ.
|
08:00
– 09:00 am |
Breakfast |
|
|
09:00
– 09:15 am |
Welcome |
H.-S.
Philip Wong (Stanford) Yoshio
Nishi (Stanford) Dirk
Wouters (IMEC) |
|
|
Keynote
Session |
Chair:
Rainer Waser (Jülich-Aachen Research Alliance-FIT, Germany) |
|
09:15
– 09:55 am |
Keynote:
Process
and stack optimization for low-power scaled HfO2-based RRAM |
Dirk
Wouters (IMEC) |
|
09:55
– 10:35 am |
Keynote:
Design Requirements for Embedded RRAM |
Rob
Aitken (ARM) |
|
10:35
– 10:55 am |
Break |
|
|
|
Session
Title: RRAM Device & Materials |
Chair:
Daniele Ielmini (Politecnico di Milano, Italy) |
|
10:55
– 11:20 am |
Optimizing
RRAM characteristics through forming/reset operations |
Gennadi
Bersuker (SEMATECH) |
|
11:20–
11:45 am |
Nanometallic
Memory |
I-Wei
Chen (U. Pennsylvannia) |
|
11:45
– 12:10 pm |
Materials engineering for nanoscaled
resistive memories |
Sabina
Spiga (Unità di Agrate Brianza, Italy) |
|
12:10
– 01:30 pm |
Lunch |
Allen
Extension Patio |
|
|
Session
Title: Application and Design |
Chair:
Fred Chen (ITRI, Taiwan) |
|
01:30
– 01:55 pm |
FPGA
with RRAM Configuration Memory |
Simon
Wong (Stanford) |
|
01:55
– 02:20 pm |
Atom
switch technology for low-power programmable logic |
Munehiro
Tada (LEAP/NEC) |
|
02:20
– 02:50 pm |
Break |
|
|
|
Session
Title: RRAM Switching Mechanism |
Chair:
Prof. Jinfeng Kang (Peking University, China) |
|
02:50
– 03:15 pm |
Observation
of Real Time Memory Switching in Devices Using In situ Electron
Microscopy |
Ritesh
Agarwal (U. Pennsylvannia) |
|
03:15
– 03:40 pm |
On-Off
Switching Mechanism of Oxide Based ReRAM by Ab Initio Electronic Structure
Calculations |
Kenji
Shiraishi (Tsukuba University, Japan) |
|
03:40
– 04:05 pm |
Nanoscale
analysis of redox-processes in resistive switching complex oxide devices |
Regina
Dittmann (FZ Juelich, Germany) |
|
04:05
– 04:35 pm |
Break |
|
|
04:35
– 06:00 pm |
Panel
discussion: “RRAM or STTRAM – which will be the winner?” |
Moderator:
Jurczak Malgorzata (IMEC) Panelists: Tetsuo
Endoh (Tohuku Univ.) Seung
Kang (Qualcomm) Su Ock
Chung (Hynix) Fred
Chen (ITRI, Taiwan) Gennadi
Bersuker (SEMATECH) Kirk
Prall (Micron) |
|
06:00
– 8:30 pm |
Dinner
at the Faculty Club at Stanford |
Keynote
talks are 40 minutes. Invited presentations are 25 minutes.
October 9,
2012
(Tuesday) – Paul G. Allen Building Extension Auditorium (Allen 101X) ,
Stanford
Univ.
|
08:00
– 09:00 am |
Breakfast |
|
|
|
Session
Title: RRAM with Selectors I & Emerging topics |
Chair:
Ming-Hsiu (Eric) Lee (Macronix) |
|
09:00
– 09:25 am |
Tunnel
RRAM - Device Features and 1R True Cross-Point Implementation |
Rene
Meyer, Louis Parrillo, Bruce Bateman (Rambus) |
|
09:25
– 09:50 am |
Mechanism
of Bipolar and Unipolar Resistive Switching on Metal Oxide Nanowires |
Tomoji
Kawai (Osaka University, Japan) |
|
09:50
– 10:20 am |
Break |
|
|
|
Session
Title: RRAM Modeling |
Chair:
Luca Larcher (Università di Modena e Reggio Emilia, Italy) |
|
10:20
– 10:45 am |
Switching
model of HfO2-based RRAM |
Robin
Degreave (IMEC) |
|
10:45
– 11:10 am |
Unipolar
reset and atomic-size effects in the conducting filament of RRAM |
Jordi
Sune (Universitat Autònoma de Barcelona, Spain) |
|
11:10
– 11:35 pm |
Defect
formation kinetics in high k oxides affecting forming, set/reset and
data retention in ReRAMs |
Dipu
Pramanik (Intermolecular) |
|
11:35
– 01:00 pm |
Lunch |
|
|
|
Session
Title: CBRAM |
Chair:
Shimeng Yu (Stanford) |
|
01:00
– 01:25 pm |
Experimental and theoretical investigation of
GeS2-baded CBRAM cells |
Barbara
de Salvo and Elisa Vianello (LETI, France) |
|
01:25
– 01:50 pm |
CBRAM
from an atomic wire point of view |
John
Jameson (Adesto) |
|
01:50
– 02:20 pm |
Break |
|
|
|
Session
Title: RRAM with Selectors II |
Chair:
An Chen (Globalfoundries) |
|
02:20
– 02:45 pm |
Selector
Devices for Cross-point ReRAM |
Hyunsang
Hwang (POSTECH, Korea) |
|
02:45
– 03:10 pm |
Self-Rectifying
RRAM for High Density Crossbar Integration |
Ming
Liu (Chinese Academy of Sciences, China) |
|
03:10
– 03:35 pm |
Crossbar
memory using stacked TiO2 thin film-based Schottky diode and unipolar switching memory
cell |
Cheol
Seong Hwang (Seoul National University, Korea) |
|
03:35
– 04:05 pm |
Break |
|
|
04:05
– 05:35 pm |
Panel
discussion: “Selector for Resistive Memories – What Works and What
Doesn’t?” |
Moderator:
H.-S. P. Wong (Stanford) Panelists: Rohit
Shenoy (IBM) C.S.
Hwang (Seoul National U.) Bruce
Bateman (Rambus) An
Chen (Globalfoundries) Brian
Lee (Petari) Hyunsang
Hwang (POSTECH, Korea) |
Keynote talks are 40 minutes. Invited
presentations are 25
minutes.
