Non-Volatile Memory Technology Research Initiative
Review Meeting
Center for Integrated Systems, Stanford University
Friday, May 12th 2006
Due to the space limit, the presentation slides related to this meeting have been removed!
If you are interested in any slides listed below, pleae contact the web manager.
8:30am Welcome - Yoshio Nishi
8:45-9:30am Ferroelectric Memory
Overview of research - Paul McIntyre
“Ferroelectric resistance change memory principles & materials” - Rene Meyer
"Interface studies of ferroelectric memory capacitors" - Mike Chen
9:30-10:15am Flash memory
Overview of research - Krishna Saraswat
"A Tunnel Barrier Engineered Flash Memory" - Pawan Kapur
"A Scalable Vertical Flash Memory" - Hoon Cho
10:45-11:30am Resistance change memory I/Phase change memory
Overview of research - Philip Wong
"Phase change memory device scaling" - SangBum Kim
"Towards a cross-point phase change memory using nanowire pn junctions" - Yuan Zhang
1:00-1:45pm Resistance change memory II/Conductive bridge memory
Overview of research - Yoshio Nishi
"ZnSCdS memory characterization" - Zheng Wang
"CuS based conductance bridge memory” - Sung Woo Kim
“Investigation of nanoscale volumes of metal sulfide” - John Jameson, Yoshi
Fukuzumi
1:45-2:30pm Nonvolatile circuits
Overview of research - Simon Wong
"Integration of Programmable Interconnect with CMOS” - Aaron Gibby
"Programmable Circuit" - Wei Wang
2:30-4:00pm Student poster session, including coffee break
4:00-5:00pm Discussions with industrial advisory committee and five faculty members
5:00pm Adjourn