Agenda
Non-Volatile Memory Technology Research Initiative
Review Meeting
Center for Integrated Systems, Stanford University
Friday, Nov 15th, 2009
8:00am |
Yoshio Nishi |
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Flash and Extension Chaired by Krishna Saraswat |
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8:35am |
Krishna Saraswat |
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8:55am |
A highly scalable capacitorless double gate quantum well single transistor DRAM |
Gunhan Ertosun |
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9:15am |
Impact of fluorine incorporation on performance in nonvolatile NAND flash memory |
Sarves Verma |
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9:35am |
Break |
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Phase Change |
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Chaired by H-S. Philip Wong |
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9:50am |
H-S. Philip Wong |
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10:10am |
Generalized nanocrystal formation by electron-beam induced vaporization |
Marissa caldwell |
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10:30am |
Yuan Zhang |
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10:50am |
In-situ electrical devices of phase-change and metal bridge memory |
Stefan Meister |
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Resistance Change Chaired by Yi Cui |
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11:10am |
Yoshio Nishi |
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11:30am
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Byoungil Lee
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11:50am |
Investigating the impact of hydrogen on the forming process in PCMO thin film for RRAM |
Mihir Tendulkar |
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12:10am |
Ab-initio study of oxygen vacancy for TiO2 switching mechanism |
Seong-Geon Park |
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Lunch Break – CISX Patio |
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Memory Cell and circuits Chaired by Simon Wong |
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1:30pm |
Simon Wong |
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1:50pm |
Wanki Kim |
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2:10pm |
Elaine Ou |
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2:30pm |
Stanley Yip |
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2:50pm Student Posters |
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All students under NMTRI funding will have posters. |
All Students |
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4:00pm |
AdCom and Faculty Meeting (Closed Session) |
AdCom members and Faculty only |
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