NMTRI Review Meeting

Date: May 25 (Friday) Time: 8:20am – 3:30 pm

Location: Cypress Auditorium (formerly called CISX101 Auditorium)

Stanford University

Agenda

8:00am		Continental Breakfast
		RRAM 1	Chaired by Simon Wong
8:20am		Nonvolatile Memory Cell and Circuits (Benchmark)	Simon Wong
8:30am		Density Functional Studies of Charge-Related Mechanisms in TiO2 Resistive Switching	Liang Zhao
8:50am		Ab-Initio Modeling for HfO2	Dan Duncan
9:10am		Understanding the Kinetics of Reset in HfO2 based RRAM	Asad Kalantarian
9:30am		STT RAM Modeling Update	Shan Wang
10:00 am		Coffee Break
		RRAM II	Chaired by Yoshio Nishi
10:15am		Resistance change memory (Benchmark)	Yoshio Nishi
10:25am		Resistive switching behaviors of HfO2-x doped with ZrO2-x	Seung Wook Ryu
10:45am		A Compact Model for OxRAM with Variations	Ximeng (Simon) Guan and Shimeng Yu
11:05am		ALD AlOxNy Resistance Change Film	Sung Il Park
11:25am		3D FPGA with RRAM Configuration Memory	Young Yang Liauw
		Phase Change Memory and 1TDRAM	Chaired by Philip Wong
11:45am		PCM progress overview	Philip Wong
11:55pm		Trap Level Studies at the OFF State of the Phase Change Memory	Rakesh Jeyasingh
12:15pm		1T DRAM : Experiments and Characterization	Ashish Pal
12:35pm		Lunch Break – CISX Patio
1:30pm Student Posters		All students under NMTRI funding will have posters.
2:30pm	AdCom and Faculty Meeting (Closed Session)		AdCom members and Faculty only
3:50pm	Adjourn

Poster presentations

All students will give poster presentations starting at 1:30pm, and also the following student will have a poster presentation: