NMTRI Review Meeting

Date: November 18, 2011 Time: 8:20am – 4:00 pm

Location: Cypress Auditorium (formerly called CISX101 Auditorium)

Stanford University

Agenda

8:00am		Continental Breakfast
RRAM 1 Chaired by Yoshio Nishi
8:20am		Resistance change memory (Benchmark)	Yoshio Nishi
8:30am		Understanding Filament Formation in HfO2 based RRAM: Improved Filament Control Through Constant Voltage Forming	Asad Kalantarian
8:50am		Density functional studies of charge-related mechanisms in TiO2 resistive switching	Liang Zhao
9:10am		Metal-Oxide Resistance Change Memory Assisted by Oxide-to-Oxide Interface Defects for High Density Memory Arrays	Yi Wu
9:30am		Ti electrode effects in unipolar switching of NiO with Ni insertion layer	Seung Wook Ryu
RRAM II Chaired by Simon Wong
10:10am		Nonvolatile Memory Cell and Circuits (Benchmark)	Simon Wong
10:20am		AlOxNy Resistance Change Film	Sung Il Park
10:40am		Scalability of RRAM Array	Stanley Yip
11:00am		On the Switching Parameter Variation of Metal Oxide RRAM – Part I: Physical Modeling and Simulation Methodology	Ximeng (Simon) Guan and Shimeng Yu
11:20am		On the Switching Parameter Variation of Metal Oxide RRAM – Part II: Model Corroboration and Device Optimization Design Strategy	Shimeng Yu and Ximeng (Simon) Guan
11:40pm		Lunch Break – CISX Patio
Phase Change Memory
12:40pm		Dependence of crystallization properties on the resistance drift in phase-change memory	Ethan Ahn, Byoungil Lee, Rakesh Jeyasingh
1:00pm		Analysis of memory cell selection device requirements and device opportunities	Jiale Liang
1:20pm		Understanding the Conduction and Switching Mechanism of Metal Oxide RRAM through Low Frequency Noise and AC Conductance Measurement and Analysis	Shimeng Yu, Rakesh Jeyasingh, Yi Wu
1TDRAM Chaired by Krishna Saraswat
1:40pm	1 Transistor DRAM modeling/simulation.		Ashish Pal

Poster presentations

All oral presentation speakers will have posters. In addition, below are the new poster presentations