8:00am                Continental Breakfast

 

8:30am                Welcome                                                                                          Yoshio Nishi

                                                                                                                                   

8:45-9:30am        Ferroelectric Memory                                                                    Paul McIntyre                                      

  “Electrode/ferroelectric interfaces-effects of switching

    and reliability”                                                                                   Mike Chen

   “Ferroelectric resistance change memory structures”               Paul McIntyre

 

 

9:30-10:15am      Flash memory                                                                                  Krishna Saraswat

                           “A scalable vertical flash memory cell”                                                Hoon Cho

                           “Tunnel barrier engineering for a scalable flash memory”             Sarves Verma

10:15-10:45am    Break

 

10:45-11:30am   Resistance change memory I/Phase change                                Philip Wong

               “Phase change memory with a nanowire pn junction as

                             bottom electrode”                                                                            SangBum Kim/Yuan Zhang

                           “Phase change nanocrystal synthesis”                                             Marissa Coldwell

                      

11:30-12:15pm    Resistance change memory II/Solid state electrolyte                Yoshio Nishi

    “CuS based conductance bridge memory”                                         Sung Woo Kim/Zheng Wang

    “Investigation of nanoscale volumes of metal oxide”               John Jameson

 

12:15-1:15pm      Lunch

 

1:15-2:30pm        Nanowire memory                                                              Yi Cui 

                            “Phase change nanowire memory”                                                 Stefan Meister

                            “Solid state electrolyte nanowire memory”                                    David Schoen

 

2:30-3:15pm       Nonvolatile Circuits                                                                        Simon Wong

          “Nonvolatile SRAM”                                                                        Wei Wang

                            “Cross-Point Array”                                                                         Elaine Ou      

                      

3:15-4:30pm        Student poster session, including coffee break

 

4:30-5:30pm        Discussions with industrial advisory committee and six faculty members

 

5:30pm    Adjourn