NMTRI Publication and Presentations (up to 2011)

 

         Refereed journal publications       

 

1.      E. Ou S. Wong, “Array Architecture for a Nonvolatile 3-Dimensional Cross-Point Resistance-Change Memory,” to be published in IEEE Journal of Solid Sate Circuits, 2011.

2.      B. Magyari-Köpe, S. Park, H. Lee, and Y. Nishi,” Understanding the switching mechanism in RRAM devices and the dielectric breakdown of ultrathin high-k gate stacks from first principles calculations”, ECS Transactions - ULSI vs. TFT", 37, 2011.

3.      S. Park, B. Magyari-Köpe, and Y. Nishi, The impact of oxygen vacancies on the formation of a conductive channel in rutile TiO2”,,IEEE Electron Device Letters, 32, 197, 2011

4.      B. Magyari-Köpe, M. Tendulkar, S. Park, H. Lee, and Y. Nishi, “Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3”, Nanotechnology22, 254029, 2011

5.      H.-S. P. Wong, S. Raoux, S. Kim, J. Liang, J.P. Reifenberg, B. Rajendran, M. Asheghi, K.E. Goodson, “Phase Change Memory,” invited paper, Proceedings of the IEEE, Vol. 98, No. 12, pp. 2201 – 2227, December 2010

6.      S. Yu, Y. Wu, H.-S. P. Wong, “Investigating the Switching Dynamics and Multilevel Capability in Bipolar Metal Oxide Resistive Switching Memory,” Applied Physics Letters, 98, 103514, 2011

7.      S. Kim, B.J. Bae, Y. Zhang, R.G. D. Jeyasingh, Y. Kim, I.-G. Baek, S. Park, S.-W. Nam, H.-S. P. Wong, “1D Thickness Scaling Study of Phase Change Material (Ge2Sb2Te5) using a Pseudo 3-Terminal Device,”IEEE Trans. Electron Devices, accepted for publication, 2011.

8.      S. Meister, S. Kim, J. Cha, H.-S. P. Wong, Y. Cui, “In Situ Transmission Electron Microscopy Observation of Nanostructural Changes in Phase-Change Memory,”ACS Nano, a vol. 5, no. 4, pp 2742–2748, March 2011

9.      S. Yu, H.-S. P. Wong, “Compact Modeling of Conducting Bridge Random Access Memory (CBRAM),” IEEE Trans. Electron Devices, Vol. 58, No. 5, pp. 1352 - 1360, 2011

10.  S. Kim, B. Lee, M. Asheghi, G.A.M. Hurkx, J. Reifenberg, K. Goodson, H.-S. P. Wong, “Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage,” IEEE Trans. Electron Devices, Vol. 58, No. 3, pp. 582 – 592, 2011

11.  S. Yu, H.-S. P. Wong, “A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM,” IEEE Electron Device Letters, vol. 31, No. 12, pp. 1455 – 1457, 2010. DOI: 10.1109/LED.2010.2078794

12.  Y. Wu, B. Lee, H.-S. P. Wong, “Al2O3-based RRAM Using Atomic Layer Deposition (ALD) with 1μA Reset Current,” IEEE Electron Device Letters, vol. 31, No. 12, pp. 1449 – 1451, 2010. DOI: 10.1109/LED.2010.2074177

13.  M. A. Caldwell, B. Haynor, S. Aloni, D. F. Ogletree, H.-S. P. Wong, J. J. Urban, and D. J. Milliron, “Spectroscopic Evidence for Exceptional Thermal Contribution to Electron Beam-Induced Fragmentation,” J. Phys. Chem. C, 2010, 114 (50), pp 22064–22068. DOI: 10.1021/jp1078086

14.  S. Yu, J. Liang, Y. Wu, H.-S. P. Wong, “Read/Write Schemes Analysis for the Novel Complementary Resistive Switches in Passive Crossbar Memory Arrays,” Nanotechnology, vol. 21, pp.  465202, 2010. doi: 10.1088/0957-4484/21/46/465202

15.  J. Liang, H.-S. P. Wong, “Cross-Point Memory Array without Cell Selectors – Device Characteristics and Data Storage Pattern Dependencies,” IEEE Trans. Electron Devices, vol. 57, No. 10, pp. 2531-2538, 2010

16.  M. A. Caldwell, S. Raoux, R.Y. Wang, H.-S. P. Wong and D. J. Milliron, “Synthesis and size-dependent crystallization of colloidal germanium telluride nanoparticles,” J. Mater. Chem., Volume 20, Issue 7, pp. 1285 – 1291 (2010). DOI: 10.1039/b917024c

17.      Hyung Dong Lee, Blanka Magyari-Kope, and Yoshio Nishi, "Model of Metallic Filament Formation and Rupture in NiO for Unipolar Switching", Phys. Rev. B, vol81, 2010, 193202

18.  Seong-Geon Park, Blanka Magyari-Kope, and Yoshio Nishi, "Electronic correlation effects in reduced rutile TiO2 within the LDA+U method,"Phys Rev Bvol 81 (2010)

19.  M. Günhan Ertosun, K.-Y. Lim, C. Park, J. Oh, P. Kirsch and K. C. Saraswat, "Novel Capacitorless Single Transistor Charge Trap DRAM (1T CT DRAM) Utilizing Electrons, " IEEE Electron Dev. Lett., Vol. 31, No. 5, May 2009, pp. 405-407.

20.  S. Raoux, H.-Y. Cheng, M. A. Caldewll, H.-S. P. Wong, “Crystallization Times of Ge-Te Phase Change Materials as a Function of Composition,” Applied Physics Letters, vol. 95, 07190-1 – 07190-3 (2009). DOI: 10.1063/1.3212732

21.  Günhan Ertosun and  Krishna C. Saraswat, "A Highly Scalable Capacitorless Double Gate Quantum Well Single Transistor DRAM" IEEE Trans. Electron Dev. Vol.57, No. 3, pp. 608-613, March 2010.

22.  W. Wang, S. Fujita and S. Wong, "Elimination of Forming Process for TiOx Nonvolatile Memory Device,"IEEE Electron Device Letters, Vol. 30, pp. 763-765, July 2009..

23.  W. Wang, S. Fujita and S. Wong, "RESET Mechanism of TiOx Resistance-Change Memory Device,"IEEE Electron Device Letters, Vol. 30, pp. 733-735, July 2009.

24.   Y. Zhang, S. Raoux, D. Krebs, L.E. Krupp, T. Topuria, M.A. Caldwell, D.J. Milliron, A. Kellock, P.M. Rice, J.L. Jordan-Sweet, H.-S. P. Wong,” Phase Change Nanodots Patterning Using a Self-Assembly Polymer Lithography and Crystallization Analysis”, Journal of Applied Physics, Vol.104, Issue 7, pp. 074312-1 074312-5, October 6, 2008. DOI: 10.1063/1.2981070

25.  S. Meister, D. T. Schoen, M. A. Topinka, A. M. Minor, Y. Cui “Void Formation Induced Electrical Switching in Phase-Change Nanowires” Nano Lett. 8, 4562-4567 (2008).

26.  S. Kim, Y. Zhang, J. McVittie, H. Jagannathan, Y. Nishi, H.-S. P. Wong, “Integrating Phase Change Memory Cell with Ge Nanowire Diode for Cross-Point Memory Experimental Demonstration and Analysis”, IEEE Trans. Electron Devices, vol. 55, No. 9, pp. 2307 2313, September, 2008.

27.  S. Verma, E. Pop, P. Kapur, K. Parat, and K. C. Saraswat, ``Operational Voltage Reduction of Flash Memory Using High-κ Composite Tunnel Barriers," IEEE Electron Dev. Lett., Vol. 29, No. 3, pp. 252-254, March 2008.

28.   M. Gunhan Ertosun, H. Cho, P. Kapur, and K. C. Saraswat, ``A Nanoscale Vertical Double-GateSingle-Transistor Capacitorless DRAM,” IEEE Electron Dev. Lett., Vol. 29, June 2008 pp. 615 – 617.

29.  D. Milliron, M.A. Caldwell, H.-S. P. Wong, “Synthesis of Metal Chalcogenide Nanodot Arrays Using Block Copolymer-Derived Nanoreactors”, Nano Letters, Vol. 7, No. 11, pp. 3503 3507 (2007) (DOI: 10.1021/nl072109b September 28, 2007.)

30.  S. Kim, H.-S. P. Wong, “Analysis of Temperature in Phase Change Memory Scaling”, IEEE Electron Device Letters, vol. 2 Hoon Cho, Pawan Kapur, Pranav Kalavade and K. C. Saraswat, ``Highly Scalable Vertical Double Gate NOR Flash Memory,” Tech Digest of IEEE IEDM, Dec. 2007, pp. 917-920.

31.  M. Günhan Ertosun, P. Kapur and K. C. Saraswat, ``A Highly Scalable Capacitorless Double Gate Quantum Well Single Transistor DRAM:1T-QW DRAM," IEEE Electron Dev. Lett., Vol. 29, December 2008 pp. 1405-1407.

32.  8, No. 8, pp. 697 699, August, 2007.

33.  J.R. Jameson, Y. Fukuzumi, Z. Wang, P. Griffin, K. Tsunoda, G.I. Meijer, and Y. Nishi, “Field-programmable rectification in rutile TiO2 crystals,” Applied Physics Letters 91, 112101 (2007) [3 pages]

34.  Y. Zhang, H.-S. P. Wong, S. Raoux, J.N. Cha, C.T. Rettner, L.E. Krupp, T. Topuria, D.J. Milliron, P.M. Rice, J.L. Jordan-Sweet, “Phase Change Nanodot Arrays Fabricated Using a Self-Assembly Diblock Copolymer Approach”, Applied Physics Letters, 91, 013104, July 2, 2007

35.  Y. Chen and P.C. McIntyre, “Effects of Chemical Stability of Platinum/Lead Zirconate Titanate and Iridium Oxide/Lead Zirconate Titanate interfaces on Ferroelectric Thin Film Switching Reliability,” Appl. Phys. Lett. 91, 232906-1-3 (2007).

36.  Y. Chen and P.C. McIntyre, “Lead Zirconate Titanate Ferroelectric Thin Film Capacitors: Effects of Surface Treatments on Ferroelectric Properties,” Appl. Phys. Lett. 91, 072910-1-3 (2007).

37.  K. Tsunoda, Y. Fukuzumi, J.R. Jameson, Z. Wang, P.B. Griffin, and Y. Nishi, “Bipolar resistive switching in polycrystalline TiO2 films,” Applied Physics Letters 90, 113501 (2007) [3 pages].

38.  J. Cha, Y. Zhang. H.-S. P. Wong, S. Raoux, C. Rettner, L. Krupp, V. Deline, Biomimetic Approaches for Fabricating High Density Nanopatterned Arrays, Chemistry of Materials, Vol. 19, pp. 839 843, February 20, 2007

39.  Z. Wang, P. Griffin, J. McVittis, S. Wong, P. McIntyre and Y.Nishi, "Resistive Switching Mechanism in ZnXCd1-XS Nonvolatile Memory Devices," IEEE Electron Device Letters, Vol. 28, pp. 14-16, January 2007.

40.  W. Wang, A. Gibby, Z. Wang, S. Fujita,  K. Abe, P. Griffin, Y. Nishi, and S. Wong, "Non-volatile SRAM," 5th Semiconductor Memory Symposium, Tokyo, Japan, January 2007

41.  J.R. Jameson, P.B. Griffin, J.D. Plummer, and Y. Nishi, “Charge trapping in high-k gate stacks due to the bilayer structure itself,” IEEE Transactions on Electron Devices 16 (53), 1858 (2006) [10 pages]

42.  J.R. Jameson, W. Harrison, P.B. Griffin, J.D. Plummer, and Y. Nishi, “A semiclassical model of dielectric relaxation in glasses,” Journal of Applied Physics 100 (12), 124104 (2006) [20 pages]
 

 

Invited talks

      

 

1.      Y. Nishi, “RRAM, Challenges and Opportunites” Short Course at International Memory Workshop, May 22, 2011, Monterey, California

2.       H.-S. P. Wong, S. Kim, B. Lee, M.A. Caldwell, J. Liang, Y. Wu, R.G.D. Jeyasingh, S. Yu, “Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM),” invited paper, International Memory Workshop, Monterey, CA, pp. 10 – 14, May 22 – 25, 2011.

3.       Y. Nishi, “Materials Challenge of Integration of Nanoelectronic Devices and Circuits”, 2010 Fall MRS Meeting, Nanomaterials Integration for Electronics, Energy, and Sensing, Dec. 1-3, 2010 Boston, MA.

4.      Y. Nishi, “VLSI Technologies, Past, Present and Future, challenges and opportunities” Semicon Korea, Keynote address, January 26, 2011, Seoul Korea

5.H.-S. P. Wong, S. Kim, M. A. Caldwell, J. Liang, R. Jeyasingh, “Scaling Studies of Phase Change Memory,” Materials Research Society (MRS) Spring Meeting, R: Phase-Change Materials for Memory and Reconfigurable Electronics Applications, invited paper, paper R4.5, San Francisco, CA, April 25 – 28, 2011

6.M. Caldwell, D. Milliron, H.-S. P. Wong, “Challenges in Colloidal Phase Change Nanoparticle Devices,” invited paper, European Phase Change and Ovonics Symposium (E*PCOS), Politecnico di Milano in Milano, Italy, September 6 – 7, 2010.

7.H.-S. P. Wong, S. Kim, B. Lee, M. Caldwell, J. Liang, Y. Wu, R. G. D. Jeyasingh, S. Yu, “Recent Progress of Phase Change Memory (PCM) and Resistance Change Memory (RRAM),” 10th International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai, China, November 1 – 4, 2010

8.M. Caldwell, S. Raoux, R. Y. Wang, D. Milliron, H.-S. P. Wong, “Synthesis and Electrical Characterization of Amorphous GeTe Nanoparticles,” Materials Research Society (MRS) Spring Meeting, Symposium H: Phase-Change Materials for Memory and Reconfigurable Electronics Applications, invited paper, paper H4.5, San Francisco, CA, April 5 – 8, 2010

9.    Y. Nishi, “Challenges and Opportunities for Future Nonvolatile Memory Technology”,2010 International Symposium on Next Generation Tera-bit- Memory Technology, August 26, 2010 Hanynag University, Seoul , Korea 

10.  Y. Nishi, “Nonvolatile Memory Trend”, 3rd Annual Meeting of International Collaborative R&D Project for Semiconductors,Renaissance Hotel, Seoul, Korea, August 25, 2010

11.  Y. Nishi, “Resistive Switching Mechanism and On-state Conduction “, Resistive Switch Memory Workshop, April 4, 2010, Santa Clara Intel

12.  J.R. Jameson and Yoshio Nishi, “The Roles of Oxygen Vacancies and Hydrogen Ions in TiO2 Based Memory Devices:, 2010 ISIF, Puerto Rico

13.  Y. Nishi, H-S P. Wong and S. Wong, , “Resistance Change Memory Materials and Devices, Mechanism and Scalability”,Nonvolatile Memory Technology Symposium, October 26, 2009, Portland, OR

14.  S. Kim, Y. Zhang, B. Lee, M. Caldwell, H.-S. P. Wong, “Fabrication and Characterization of Emerging Nanoscale Memory”, International Symposium on Circuits and Systems (ISCAS), Taipei, Taiwan, May 24 27, 2009.

15.  Y. Zhang, S. Kim, B. Lee, M. Caldwell,H.-S. P. Wong, “Fabrication and Characterization of Emerging Nanoscale Memory”, International Disk Drive Equipment and Materials Association (IDEMA) Technical Symposium, What's in Store for Storage, The Future of Non-Volatile Technologies, San Jose, CA, paper 5.3, December 11, 2008.

16.  Y. Nishi, “Recent Progress in Resistance Change Memory” American Vacuum Society Thin-films User Group meeting, October 15, 2008, Santa Clara, CA

17.  J.R. Jameson, “Hydrogen and TiO2 resistance-change memory,” Monthly meeting of the Thin Film User Group, Northern California Chapter of the American Vacuum Society, Santa Clara, CA, October 15, 2008

18.  Y. Nishi, “Challenge of Nanoelectronic Materials and Devices toward New Nonvolatile Memories” 9th International Conference on Solid-State and Integrated-Circuit Technology, October, 2008, Beijing, China 

19.  Y. Nishi and J.R. Jameson, “Recent progress in resistance change memory,” IEEE Device Research Conference (DRC), University of California, Santa Barbara, CA, June 23–25, 2008

20.  Y. Nishi, “Challenges in Nanoelectronic Devices and Materials” SPCC Conference, April, 2008, Austin, TX

21.  S. Raoux, C.T. Rettner, J. Jordan-Sweet, Y.-C. Chen, Y. Zhang, D. Milliron, M. Caldwell, J. Cha, and H.-S. P. Wong, “Scaling Properties of Phase Change Materials”, 8th Annual Non-Volatile Memory Technology Symposium, November 10-13, 2007, Albuquerque, New Mexico, U.S.A.

22.  H.-S. P. Wong, “Emerging Memories”, IEEE New Frontiers in Memory Symposium, San Jose, CA, September 20, 2007.

23.  H.-S. P. Wong, “Emerging Memories”, 7th International Workshop on Future Information Processing Technologies (IWFIPT), pp. 15, Dresden, Germany, 4-7 September 2007.

24.  H.-S. P. Wong, “Phase Change Memory Modeling and Simulation”, Phase Change Memory Workshop, Monterey, CA, August 26, 2007

25.  P. McIntyre, Y. Chen, M. Kurasawa and R. Meyer,“Ferroelectric/Electrode Interface Layers: Their Effects on Reliable Ferroelectric Polarization Switching and Possible Resistance Switching,” Fall MRS Meeting, Boston, MA, Nov. 27-Dec. 1, 2006.

 

 

 

     Conference presentations     

 

1.    W Kim, S. Park, Z. Zhang, Y. Yang-Liauw, D. Sekar, H.-S. P. Wong and S. Wong, “Forming Free Nitrogen-Doped AlOX RRAM with sub-uA Programming Current,” Symp VLSI Technology, paper 2B-1, Kyoto, Japan June 2011.

2.      S-G Park, B. Magyari-Kope and Y. Nishi, “Theoretical Study of the Resistance Switching Mechanism in Rutile TiO2-x for ReRAM,” Symp VLSI Technology.paper 3B-2 Kyoto, Japan, June 2011.

3.Y. Wu,Y. Chai, H-Y. Chen, S. Yu, H.-S. P. Wong, “Resistive Switching AlOx-Based Memory with CNT Electrode for Ultra-Low Switching Current and High Density Memory Application,”Symp. VLSI Technology, paper 2B-3, Kyoto, Japan, June 13 – 16, 2011.

4.J. Liang, R. G.D. Jeyasingh, H.-Y. Chen, H.-S. P. Wong, “A 1.4μA Reset Current Phase Change Memory Cell with Integrated Carbon Nanotube Electrodes for Cross-Point Memory Application,” Symp. VLSI Technology, paper 5B-4, Kyoto, Japan, June 13 – 16, 2011.

5.      R.G.D. Jeyasingh, J.A.Chroboczek, G. Ghibaudo,M. Mouis, and H.-S. P. Wong “Low Frequency Noise in Phase Change Materials,” 21st International Conference on Noise and Fluctuations (ICNF 2011), Toronto, Canada, June 12 – 16, 2011.

6.R.G.D. Jeyasingh, D. Kuzum, H.-S. P. Wong, “Direct measurement of trap spacing in phase change memory cells using ATE devices,” International Memory Workshop, Monterey, CA, pp. 135 – 138, May 22 – 25, 2011.

7.      S. Yu, Y. Wu, Y. Chai, J. Provine, H.-S. P. Wong, “Characterization of Switching Parameters and Multilevel Capability in HfOx/AlOx Bi-layer RRAM Devices,” 18th International Symposium on VLSI Technology, Systems and Applications (2010 VLSI-TSA), pp. 106 – 107, Hsinchu, Taiwan, 25- 27 April, 2011.

8.      B. Magyari-Köpe, and Y. Nishi, “Interface structures and band offsets in a model Ge-GeO2-x-HfO2-TiN metal gate stack: localization of oxygen vacancies near interfaces, Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 2011

 

9.      Hyung Dong Lee, Blanka Magyari-Köpe, Kwanghee Cho and Yoshio Nishi, “Understanding of the resistive switching of unipolar NiO-based RRAM, “ Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 2011

 

10.  Hyung Dong Lee, Seung Wook Ryu, Blanka Magyari-Köpe, Kwanghee Cho and Yoshio Nishi, “Reduction in reset current of unipolar NiO-based resistive switching through nickel interfacial layer”, Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 2011.

11.  Kwanghee Cho, Hyung Dong Lee, Seonggeon Park, Blanka Magyari-Köpe, Yoshio Nishi, Sungjoo Hong, Sungwoong Chung, Jinwon Park and Jaeyun Yi, “First principles study of the metal-oxide interfaces in Pt/TiO2/Pt for resistive change memor”Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 2011

12.  Kwanghee Cho, Hyung Dong Lee, Seonggeon Park, Blanka Magyari-Köpe, Yoshio Nishi, Sungjoo Hong, Sungwoong Chung, Jinwon Park and Jaeyun Yi, “Electronic structure study of the reduced anatase TiO2-x using the GGA+Ud+Up method”, Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April 2011

13.  B. Magyari-Köpe and Y. Nishi (invited), “Ab initio modeling of oxygen vacancies: understanding the switching mechanism in RRAM devices and the dielectric breakdown mechanism of ultrathin high-k based CMOS gate stacks”, SEMATECH, Austin, TX, USA, March 2011

14.  S. Yu, H.-S. P. Wong, “Modeling the Switching Dynamics of Programmable-Metallization-Cell (PMC) memory and Its Application as Synapse Device for a Neuromorphic Computation System,” IEEE International Electron Devices Meeting (IEDM), paper 22.1, pp. 520 – 523, December 6 – 8, San Francisco, 2010.

15.  Y. Chai, Y. Wu, K. Takei, H.-Y. Chen, S. Yu, P.C.H. Chan, A. Javey, H.-S. P. Wong, “Resistive Switching of Carbon-Based RRAM with CNT Electrodes for Ultra-Dense Memory,” IEEE International Electron Devices Meeting (IEDM), paper 9.3, pp. 214 – 217, December 6 – 8, San Francisco, 2010.

16.  J. Liang, W.-S. Jung, K. Saraswat, H.-S. P. Wong, “Low Temperature Vertical Poly-silicon Diode Fabricated by Metal-Induced Lateral Crystallization (MILC) of Two Amorphous Silicon Layers with In-Situ Doping,” Materials Research Society (MRS) Fall Meeting, paper G6.41, November 29 – December 3, Boston, MA, 2010.

17.  Y. Wu, S. Yu, B. Lee, H.-S. P. Wong, “Gradual SET and RESET TiN/Al2O3/Pt resistive switching device with sub-20µA current,” Materials Research Society (MRS) Fall Meeting, paper K4.2, November 29 – December 3, Boston, MA, 2010.

18.  S. Kim, B. Lee, M. Asheghi, G.A.M. Hurkx, J. Reifenberg, K. Goodson, and H.-S. P. Wong, “Thermal disturbance and its impact on reliability of phase-change memory studied by micro-thermal stage,” IEEE International Reliability Physics Symposium (IRPS), pp. 2C.5.1 – 2C.5.5, Anaheim, CA, May 2-6, 2010.

19.  J. Liang, H.-S. P. Wong, “Size Limitation of Cross-Point Memory Array and Its Dependence on Data Storage Pattern and Device Parameters,” IEEE International Interconnect Technology Conference, paper 6.3, Burlingame, California, USA, June 7 - 9, 2010.

20.  S. Yu, H.-S. P. Wong, “A Phenomenological Model of Oxygen Ion Transport for Metal Oxide Resistive Switching Memory,” International Memory Workshop, pp. 54 – 57, Seoul, South Korea, May 16 – 19, 2010.

21.  Y. Wu, B. Lee, H.-S. P. Wong, “Ultra-Low Power Al2O3-based RRAM with 1μA Reset Current,” 17th International Symposium on VLSI Technology, Systems and Applications (2010 VLSI-TSA), pp. 136 – 137, Hsinchu, Taiwan, 26- 28 April, 2010.

22.  S. Kim, R. Jeyasingh, J. Reifenberg, J. Lee, M. Asheghi, K. Goodson, H.-S. P. Wong, “Electrical and Thermal Contact Resistance of the Phase-change Material Cycled by Micro-thermal Stage,” Materials Research Society (MRS) Spring Meeting, Symposium H: Phase-Change Materials for Memory and Reconfigurable Electronics Applications, paper H5.6, San Francisco, CA, April 5 – 8, 2010

23.  Stefan Meister, Judy Cha, Yi Cui, “In situ TEM study of electrical switching in lateral phase-change memory cells”, 38th Annual Northern California Electronic Materials Symposium, April 2010, Santa Clara, CA (poster)

24.  Seong-Geon Park, Blanka Magyari-Kope, and Yoshio Nishi, "The impact of oxygen vacancy configurations on the conductance channel in rutile TiO2 for resistance switching memory, " MRS Spring meeting, San Francisco, USA, April, 2010.

25.  Seong-Geon Park, Blanka Magyari-Kope, and Yoshio Nishi, "The impact of oxygen vacancies on conductance channel in rutile TiO2," 1st International Workshop on Conductive Bridge Memory (CBRAM), Stanford University, Stanford, USA, April, 2010

26.  Hyung Dong Lee, Blanka Magyari-Kope, and Yoshio Nishi,"The Impact of Oxygen Vacancies on the Formation of Metallic Filament in NiO", Resistive Switching and Memristors Workshop, 2010, University of California, Davis

27.  Hyung Dong Lee, Blanka Magyari-Kope, and Yoshio Nishi,"Metallic Filament Formation and Oxygen Vacancy Migration Barrier in NiO for Unipolar Resistive Switching", MRS-Spring meeting, 2010, San Francisco

28.  J.R. Jameson and Y. Nishi, “The Roles of Oxygen  Vacancies and Hydrogen Ions in TiO2 Based Memory Devices”, ISIF, Puerto Rico, June 2010

29.  K. Hosotani, S.-G. Park, Y. Nishi, "Electric Field Dependent Switching and Degradation of Resistance Random Access Memory," 2009 International Integrated Reliability Workshop Final Report, p11-14 (2009)

30.  Sarves Verma, D. C. Gilmer, P. Lysaght, J. Price,  G. Bersuker, P. D. Kirsch,H. H. Tseng, R. Jammy, K. C. Saraswat "Physical & Electrical Characterization of Fluorine Passivation for Improving Band-Engineered -SiO2/HfSiO/SiO2 (OHO) TANOS Flash Memory" SISC 2009.

31.  D. C. Gilmer, N. Goel, H. Park, C. Park, S. Verma, G. Bersuker, P. Lysaght, H.-H. Tseng, P. D. Kirsch, K. C. Saraswat and R. Jammy, "Engineering the Complete MANOS-type NVM Stack for Best in Class Retention Performance," IEEE Int. Electron Dev. Meeting. (IEDM) Technical Digest, pp. 439-442, Baltimore, MD, Dec. 2009.

32.  Shyam Raghunathan, T. Krishnamohan, K. Parat and K. C. Saraswat, "Investigation of Ballistic Current in Scaled Floating-gate NAND FLASH and a solution," Int. Electron Dev. Meet. (IEDM) Technical Digest, pp. 819-822, Baltimore, MD, Dec. 2009.

33.  B. Lee, H.-S. P. Wong, “NiO Resistance Change Memory with a Novel Structure for 3D Integration and Improved Confinement of Conduction Path”, Symp. VLSI Technology, paper 9B-4, June 15 17, 2009, Kyoto, Japan.

34.  Seong-Geon Park, Blanka Magyari-Kope, and Yoshio Nishi, “Lattice and electronic effects in rutile TiO2 containing charged oxygen defects from ab initio calculations,” MRS. Symp. Proc. Vol 1160 (2009)

35.  Stefan Meister, David Schoen, Yi Cui, “In-situ TEM study of phase-change memory cells,”MRS Spring Meeting, April, 2009, San Francisco, CA

36.  B.J. Bae, S. Kim, Y. Zhang, Y.K. Kim, I.G. Baek, S.O. Park, I.S. Yeo, S. Choi, J.T. Moon, H.-S. P. Wong, and K. Kim, “1D Thickness Scaling Study of Phase Change Material (Ge2Sb2Te5) using a Pseudo 3-Terminal Device,” IEEE International Electron Devices Meeting (IEDM), paper 5.2, December 6 – 9, Baltimore, 2009

37.  Stefan Meister, SangBum Kim, David Schoen, Philip Wong, Yi Cui, “In situ and ex situ TEM study of switching in lateral phase-change memory cells”, Ninth Annual Non-Volatile memory Technology Symposium, November 2008, Pacific Grove, CA.Seong-Geon Park, Blanka Magyari-Kope, and Yoshio Nishi,“Ab-initio study of oxygen vacancy defect in rutile TiO2 for resistance switching memory,”MRS Spring Meeting, April, 2009, San Francisco, CA

38.  M. Caldwell, S. Aloni, J. J. Urban, D. J. Milliron, H.-S. P. Wong, “A General Route to Inorganic Nanoparticles Using a Condensed Electron Beam”, American Physical Society (APS) March Meeting, March 16-20, 2009, Pittsburgh, Pennsylvania.

39.  S. Verma, G. Bersuker, D. C. Gilmer, A. Padovani, H. Park, A. Nainani, D. Heh, J. Huang, J. Jiang, K. Parat, P. D. Kirsch, L. Larcher, H.-H. Tseng, K. C. Saraswat, R. Jammy, " A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with excellent Program/Erase & Endurance to 105 cycles", IMW’09 Monterey, CA, 2009

40.  M. Günhan Ertosun and K. C. Saraswat, "Characteristics of the Capacitorless Double Gate Quantum Well Single Transistor DRAM 1T-QW DRAM," IEEE Int. Conf. on Simulation of Semiconductor Processes and Devices(SISPAD '09), pp. 35-38, September 9-11, 2009 San Diego, Ca.

41.  Seong-Geon Park, Blanka Magyari-Kope, and Yoshio Nishi,“First-principlesstudy of resistance switching in rutile TiO2 with oxygen vacancy” Nonvolatile Memory Technology Symposium, November, 2008, Monterey, CA

42.  Jaeyun Yi, Sung-Woo Kim,Yun-Taek Hwang, Sung-Woong Chung, Sung-Joo Hong, Sung-Wook Park, and  Yoshio Nishi "Research on Switching property of an oxide/copper sulfide hybrid memory"Proceedings of the 2008 Non-Volatile Memory Technology Symposium (NVMTS)

43.  S. Verma, E. Pop, P. Kapur, P. Majhi, K. Parat, and K. C. Saraswat, ``Feasibility Study of Composite Dielectric Tunnel Barriers for Flash Memory," IEEE Device Research Conf., South Bend, Indiana, June 2007.

44.  K. Abe, M.P. Tendulkar, J.R. Jameson, P.B. Griffin, K. Nomura, S. Fujita, and Y. Nishi, “Ultra-high bandwidth memory with 3D-stacked emerging memory cells,” Session F: Advanced Memory Devices, International Conference on IC Design and Technology (ICICDT), Minatec in Grenoble, France, June 2–4, 2008

45.  Y. Zhang, S. Raoux, D. Krebs, L.E. Krupp, T. Topuria, M. Caldwell, D.J. Milliron, P.M. Rice, J. Jordan-Sweet, H.-S. P. Wong, “Crystallization Characteristics of Phase Change Nanoparticle Arrays Fabricated by Self-Assembly Based Lithography,” Materials Research Society (MRS) Symposium, San Francisco, CA, USA, paper G8.5, March 24 28, 2008.

46.  Sung-Woo Kim and Yoshio Nishi, "Copper Sulfide-Based Resistance Change Memory", Non-Volatile Memory Technology Symposium, 2007, Albuquerque

 

47.  S. Raoux, Y. Zhang, D. Milliron, J. Cha, M. Caldwell, C.T. Rettner, J.L. Jordan-Sweet, H.-S. P. Wong, “X-ray diffraction studies of phase change nanoparticles produced by self-assembly-based lithographic techniques”, European Phase Change and Ovonics Symposium (E*PCOS), Zermatt, Switzerland, September 1 4, 2007.

48.  Y. Zhang, S. Kim, J.P. McVittie, H. Jagannathan, Y. Chen and P.C. McIntyre, “Comparative Study of Pb(Zr,Ti)O3/Electrode Interface Layer Engineering of Ferroelectric Random Access Memory Capacitors with Pt and IrO2 Top Electrodes,” SRC TECHCON 2007, Austin, TX, Sept. 2007. (poster; Best Paper Award)

49.  J.B. Ratchford,  C.E.D. Chidsey, Y. Nishi, and H.-S. P. Wong, “An Integrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory”, Symp. VLSI Technology, pp. 98 99, June 12 14, 2007, Kyoto, Japan.

50.  Y. Chen and P.C. McIntyre,“Comparative Study of Pb(Zr,Ti)O3/Electrode Interface Layer Engineering of Ferroelectric Random Access Memory Capacitors with Pt and IrO2 Top Electrodes,” Spring MRS Meeting, San Francisco, CA, April 9-13, 2007. (talk)

51.  R.J. Zednik and P.C. McIntyre, “Biaxial Stress-Induced Domain Wall Motion at Room Temperature in Polycrystalline Lead Zirconium Titanate Thin Films,” Spring MRS Meeting, San Francisco, CA, April 9-13, 2007. (talk)

52.  Y. Zhang, S. Raoux, J. N. Cha, L. E. Krupp, C. T. Rettner, H.-S. P. Wong, “Transition Behavior of High Density Ordered Phase Change Nanostructure from Diblock Copolymer Template”, MRS Spring Meeting, Symposium I, paper I-12.8, April 10-12, San Francisco, 2007

53.  R. Zednik and P. McIntyre, “Biaxial Stress-Induced Domain Wall Motion at Room Temperature    in Nano-crystalline Lead Zirconium Titanate Thin Films,” American Physical Society March Meeting, Denver, CO, Mar. 5-9, 2007.  (poster)

54.  J.R. Jameson, Y. Fukuzumi, K. Tsunoda, P.B. Griffin, Z. Wang, and Y. Nishi, “Field-induced rectification in rutile single crystals,” C1.00255, March Meeting of the American Physical Society, Denver, CO, USA, March 5–9, 2007

55.  J.R. Jameson, Y. Fukuzumi, H.-C. Kim, and Y. Nishi, “Resistance-change memory from nanoscale volumes of metal sulfides fabricated using self-assembled di-block copolymers,” O3.2, Materials Research Society Fall Meeting, Boston, MA, USA, November 27–December 1, 2006

56.  W. Wang, A. Gibby, Z. Wang, S. Fujita, P. Griffin, Y. Nishi, and S. Wong, "Nonvolatile SRAM Cell," International Electron Devices Meeting Technical Digest, San Francisco, CA, pp.785-788, December 2006.

57.  R. Meyer, A. Vailionis, and P. McIntyre,“Effect of Growth Conditions on Stripe Domains and c-axis Parameter in PTO Ultra-Thin Films,”Fall MRS Meeting, Boston, MA, Nov. 27-Dec. 1, 2006. (poster)

58.  R. Meyer and P.C. McIntyre,“Ferroresistive Memories,” Fall MRS Meeting, Boston, MA, Nov. 27-Dec. 1, 2006. (poster)

 

 

 

 

Last modified Tue, 12 Jul, 2016 at 22:51