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Vision for Non-volatile Memory Technology Research Initiative aims at dealing with challenges of increasing needs for embedded memory with high density and low cost with power minimization by forming an interdisciplinary team of faculty, staff and students to look into technical feasibility at the device level, circuit/system level as well as develop a fundamental understanding for a variety of new non-volatile memory phenomena, materials and processes.

Scope for NMTRI covers areas of research (i) how barrier engineering can improve flash ferroelectric devices (ii) how scalable are the various resistance switch materials and mechanisms (iii) how nanowire diodes can be integrated with resistive switches in cross-point arrays (iv) how cell and circuit innovations can improve performance and (v) how bulk and interface effects control reliability and endurance.

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